bas 16s aug-09-1999 1 silicon switching diode array for high-speed switching applications internal (galvanic) isolated diodes in one package tape loading orientation vps05604 6 3 1 5 4 2 eha07193 123 4 5 6 w1s direction of unreeling top view marking on sot-363 package (for example w1s) corresponds to pin 1 of device position in tape: pin 1 opposite of feed hole side eha07291 6 54 3 2 1 c1 c2 c3 a3 a2 a1 type marking pin configuration package bas 16s a6s 1=a1 2=a2 3=a3 4=c3 5=c2 6=c1 sot-363 maximum ratings parameter symbol value unit diode reverse voltage v r 75 v peak reverse voltage v rm 85 forward current i f 200 ma surge forward current, t = 1 s i fs 4.5 a total power dissipation , t s = 85 c p tot 250 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance junction - ambient 1) r thja 530 k/w junction - soldering point r thjs 260 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bas 16s aug-09-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 100 a v (br) 75 - - v forward voltage i f = 1 ma i f = 10 ma i f = 50 ma i f = 150 ma v f - - - - - - - - 715 855 1000 1250 mv reverse current v r = 70 v i r - - 2.5 a reverse current v r = 25 v, t a = 150 c v r = 70 v i r - - - - 30 50 ac characteristics diode capacitance v r = 0 v, f = 1 mhz c d - - 2 pf reverse recovery time i f = 10 ma, i r = 10 ma, r l = 100 , measured at i r = 1ma t rr - - 6 ns test circuit for reverse recovery time ehn00016 f d.u.t. oscillograph pulse generator: t p = 100ns, d = 0.05, t r = 0.6ns, r i = 50 oscillograph: r = 50 , t r = 0.35ns, c 1pf
bas 16s aug-09-1999 3 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 ma 300 i f 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 ma 300 i f t s 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 ma 300 i f t a 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 ma 300 i f forward current i f = f ( v f ) t a = 25c 0 0 ehb00023 bas 16 0.5 1.0 v 1.5 50 100 ma 150 f f v max typ permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible pulse load i fmax / i fdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bas 16s aug-09-1999 4 forward voltage v f = f ( t a ) 0 0.5 1.0 0 50 100 150 bas 16 ehb00025 v t a v f c f = 100 ma 10 ma 1 ma 0.1 ma reverse current i r = f ( t a ) 10 10 10 0 50 100 150 bas 16 ehb00022 na t a r c 10 10 5 4 3 2 1 5 5 5 25 v 70 v max. = 70 v r v typ.
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